Dry-etch proximity function for model-based OPC beyond 65-nm node

Shunichiro Sato; Ken Ozawa; Fumikatsu Uesawa

doi:10.1117/12.657043

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10 March 2006 Dry-etch proximity function for model-based OPC beyond 65-nm node

Shunichiro Sato, Ken Ozawa, Fumikatsu Uesawa

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Proceedings Volume 6155, Data Analysis and Modeling for Process Control III; 615504 (2006) https://doi.org/10.1117/12.657043
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Dry-etch two-dimensional (2D) model functions have been investigated via 2D SEM image analyses. To evaluate dry-etch bias with respect to its 2D geometry, critical 2D pattern shapes of pre- and post-dry-etch process were compared. From the geometrical evaluation results we have confirmed that dry-etch biases can be expressed by a linear function of 2D pattern/space densities, for which integration should be taken only inside of nearest-neighbor pattern edges. It is guessed that those specific densities are required for estimating the thickness of passivation polymer films upon etching trench sidewall, which is assumed to be a critical factor for etch bias variations. We have obtained good correlations between etch bias and inside-edge pattern/space density; correlation coefficients of 0.95 for SiO2 trench etching process and 0.94 for Si trench etching process have been obtained, respectively. Optimum kernel radii of these processes were about 600 nm - 800 nm in our experiment. These distances would indicate the scope of micro-loading effect. If device pattern complexities come to these sizes, 2D pattern correction by 2D model function should be required for dry-etch biases instead of current rule-based correction.

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Shunichiro Sato, Ken Ozawa, and Fumikatsu Uesawa "Dry-etch proximity function for model-based OPC beyond 65-nm node", Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 615504 (10 March 2006); https://doi.org/10.1117/12.657043

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