15 March 2006 Improvement of OPC accuracy for 65nm node contact using KIF
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Decreasing k1 factors require improved empirical models for the most critical challenge at 65nm node, contact holes especially. These requirements are reflected in the need for increasingly accurate lithography contour simulations. One of the major contributors to final OPC accuracy is the quality of the optical model. In this study, a new approach to the calibration of an optical model by using KIF will be proposed based upon the real through scanners and steppers of illumination distribution and implement to the OPC kernel.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Te Hung Wu, Te Hung Wu, C. L. Lin, C. L. Lin, Ming Jui Chen, Ming Jui Chen, Zen Hsiang Tsai, Zen Hsiang Tsai, Chen Yu Ao, Chen Yu Ao, H. C. Thuang, H. C. Thuang, Jian Shin Liou, Jian Shin Liou, Chuen Huei Yang, Chuen Huei Yang, Ling Chieh Lin, Ling Chieh Lin, } "Improvement of OPC accuracy for 65nm node contact using KIF", Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550M (15 March 2006); doi: 10.1117/12.657900; https://doi.org/10.1117/12.657900

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