15 March 2006 Improvement of OPC accuracy for 65nm node contact using KIF
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Abstract
Decreasing k1 factors require improved empirical models for the most critical challenge at 65nm node, contact holes especially. These requirements are reflected in the need for increasingly accurate lithography contour simulations. One of the major contributors to final OPC accuracy is the quality of the optical model. In this study, a new approach to the calibration of an optical model by using KIF will be proposed based upon the real through scanners and steppers of illumination distribution and implement to the OPC kernel.
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Te Hung Wu, C. L. Lin, Ming Jui Chen, Zen Hsiang Tsai, Chen Yu Ao, H. C. Thuang, Jian Shin Liou, Chuen Huei Yang, Ling Chieh Lin, "Improvement of OPC accuracy for 65nm node contact using KIF", Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550M (15 March 2006); doi: 10.1117/12.657900; https://doi.org/10.1117/12.657900
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