Paper
13 March 2006 Platform for collaborative DFM
Author Affiliations +
Abstract
A Process/Device/Design framework called the Parametric Yield Simulator is proposed for predicting circuit variability based on circuit design and a set of characterized sources of variation. In this simulator, the aerial image of a layout is simulated across a predefined process window and resulting non-idealities in geometrical features are communicated through to circuit simulators, where circuit robustness and yield can be evaluate in terms of leakage and delay variability. The purpose of this simulator is to identify problem areas in a layout and quantify them in terms of delay and leakage in a manner in which designers and process engineers can collaborate together on an optimal solution to the problem. The Parametric Yield Simulator will serve as a launch pad for collaborative efforts between groups in different disciplines that are looking at variability and yield. Universities such as Berkeley offer a great advantage in exploring innovative approaches as different centers of key expertise exist under one roof. For example a complementary set of characterization and validation experiments has also been designed and in a collaborative study is being executed at Cypress semiconductor on a 65nm NMOS process flow. This unique opportunity of having access to a cutting edge process flow with relatively high transparency has led to a new set of experiments with contributions from six different students in circuit design, process engineering, and device physics. Collaborative efforts with the device group have also led to a new electrical linewidth metrology methodology using enhanced transistors that could prove useful for process characterization.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wojtek J. Poppe, Luigi Capodieci, and Andrew Neureuther "Platform for collaborative DFM", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 61560E (13 March 2006); https://doi.org/10.1117/12.657042
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Cited by 5 scholarly publications.
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KEYWORDS
Transistors

Critical dimension metrology

Device simulation

Design for manufacturing

Semiconductors

Optical proximity correction

Photomasks

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