14 March 2006 Diblock copolymer directed self-assembly for CMOS device fabrication
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Abstract
We present our recent work on using diblock copolymer directed self-assembly for the fabrication of silicon MOSFETs. Instead of using self-assembly to assemble the entire device, we plan to utilize self-assembly to perform one critical step of the complex MOSFET process flow in the beginning. Initial results of using PS-b-PMMA to define pores with hexagonal array having diameter of 20 nm for contact hole patterning will be described. Potential integration issues for making MOSFETs will also be addressed.
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Li-Wen Chang, Li-Wen Chang, H.-S. Philip Wong, H.-S. Philip Wong, } "Diblock copolymer directed self-assembly for CMOS device fabrication", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 615611 (14 March 2006); doi: 10.1117/12.661028; https://doi.org/10.1117/12.661028
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