24 March 2006 Improving model-based OPC performance for sub-60nm devices using real source optical model
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Abstract
In order to satisfy high density and cost effective production, extreme illumination condition, maximum sigma and OAI, is currently implemented at low k1 process. In this condition, minimal change of optical condition results in large difference of patterning. Specifically, blurring, intensity asymmetry and tele-centricity of illumination source cause deformation of some pitch patterns and CD asymmetry of semi-isolated patterns. In conventional modeling using ideal source optical model such as top-hat shape or profile, those data are regarded as noise terms since it is difficult to fit them well and such model inaccuracy produce OPC error. This paper provided results of the OPC performance using real source optical model obtained from a scanner. Real source image was filtered and normalized for easy handling. It was shown that we improved the model accuracy and significantly reduced the number of parameters. As a result, we increased process margin for sub-60nm device.
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Sunggon Jung, Sunggon Jung, In-Sung Kim, In-Sung Kim, Young-Seog Kang, Young-Seog Kang, Gi-Sung Yeo, Gi-Sung Yeo, Sang-Gyun Woo, Sang-Gyun Woo, HanKu Cho, HanKu Cho, Joo-Tae Moon, Joo-Tae Moon, } "Improving model-based OPC performance for sub-60nm devices using real source optical model", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 61561H (24 March 2006); doi: 10.1117/12.655954; https://doi.org/10.1117/12.655954
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