26 April 2006 Laser chemical vapor deposition of nanometric structures and their electrical and optical properties
Author Affiliations +
Proceedings Volume 6161, International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies; 616107 (2006) https://doi.org/10.1117/12.675006
Event: International Conference on Lasers, Applications, and Technologies 2005, 2005, St. Petersburg, Russian Federation
Abstract
Laser chemical vapor deposition (LCVD) method based on Ar+ laser radiation was applied for the synthesis of nanometric structures based on iron oxides Fe2O3-x (0 < or = x < or = 1) in the form of thin films. These structures were formed while deposition of elements from iron carbonyl vapors (Fe(CO)5). The thickness of deposited films was no more than 30 nm while deposition on the Si substrate surface and on the SiO2 substrate surface. Deposited thin films demonstrated typical semiconductor trends of specific conductivity in the range (340-170)K. Obtained semiconductor thin films based on iron oxides had the band gap for intrinsic conductivity (Eg) less than 1.0 eV. It was found out that electrical properties of these films were determined by the surface morphology of them and their content of iron oxides. Deposited films demonstrated a large third-order nonlinear optical (NLO) susceptibility (x(3)). While pumping of narrow band gap semiconductor thin film with a frequency-doubled mode-locked Nd:YAG laser (λL=532 nm) and pulse duration of 30 ps (FWHM) at power density less than 100 MW/cm2, the meaning of x(3) was about 5×10-6 e.s.u.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Mulenko, S. A. Mulenko, M. S. Brodyn, M. S. Brodyn, V. Ya. Gayvoronsky, V. Ya. Gayvoronsky, } "Laser chemical vapor deposition of nanometric structures and their electrical and optical properties", Proc. SPIE 6161, International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies, 616107 (26 April 2006); doi: 10.1117/12.675006; https://doi.org/10.1117/12.675006
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top