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12 March 1986 Amorphous Si:H Contact Linear Image Sensor
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Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986)
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
A contact linear image sensor using a-Si:H heterojunction photodiode array has been developed. The sensor is composed of a pair of LED array, a rod lens array and a document width linear image sensor in which a-Si:H photodiode array and driving ICs are mounted on the same glass The a-Si:H diode has ITO/p-a-SiC/a-Si:H/metal structure. It exhibits as high as 104 photo-to-dark current ratio and quick photoresponse because of excellent blocking characteristics and large built in potential of heterojunction. The contact sensor has been operated with 1 msec/line scanning speed. Performance tests show excellent results with 8 lines/mm resolution. Images have been satisfactorily recorded using a thermal printer. Moreover, thin film image sensor using a-Si:H TFT will be discussed as a lower cost linear image sensor.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Setsuo Kaneko, Fujio Okumura, Mikio Sakamoto, Hiroyuki Uchida, and Yuji Kajiwara "Amorphous Si:H Contact Linear Image Sensor", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986);

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