Paper
12 March 1986 Multilayered Amorphous Silicon Photoreceptors And Their Application To Optical Printers
H. Kakinuma, S. Nishikawa, T. Watanabe, K. Nihei
Author Affiliations +
Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961079
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
The preparation and properties of multilayered glow-discharge a-Si:H photoreceptors are described. It is shown that a high-rate deposition of the intrinsic layer of a Al/p/i/a-Sic structure with no stress is possible by an ordinary glow-discharge method . The composition and thickness of the blocking layers proved to affect particularly the dark decay time, residual voltage and photosensitivity. Inserting a a-Sii-xGex layer into the intrinsic layer was shown very effective in sensitizing the infrared region. A high-speed laser-beam printing system with a printing speed of 20000 lines/min for 8LPI was realized by using this sensitized photoreceptor.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Kakinuma, S. Nishikawa, T. Watanabe, and K. Nihei "Multilayered Amorphous Silicon Photoreceptors And Their Application To Optical Printers", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961079
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Printing

Nonimpact printing

Germanium

Amorphous silicon

Multilayers

Amorphous semiconductors

Laser systems engineering

RELATED CONTENT

Amorphous Semiconductors For Microelectronics
Proceedings of SPIE (March 12 1986)
Density Of States Of Amorphous Semiconductors
Proceedings of SPIE (August 21 1987)
Infrared filters for cryogenic radiometers
Proceedings of SPIE (January 21 1993)
Amorphous Silicon Alloy Photoreceptors
Proceedings of SPIE (March 12 1986)

Back to Top