31 March 2006 Lifetime characterization of capacitive power RF MEMS switches
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Abstract
RF MEMS switches provide a low-cost, high performance solution for many RF/microwave applications these switches will be important building blocks for designing phase shifters, switched filters reflector array antennas for military and commercial markets. In this paper, progress in characterizing of THALES capacitive MEMS devices under high RF power is presented. The design, fabrication and testing of capacitive RF MEMS switches for microwave/mm- wave applications on high-resistivity silicon substrate is presented. The switches tested demonstrated power handling capabilities of 2W (33 dBm) for continuous RF power. The reliability of these switches was tested at various power levels indicating that under continuous RF power. In addition a description of the power failures and their associated operating conditions is presented The PC-based test stations to cycle switches and measure lifetime under DC and RF loads have been developed. Best-case lifetimes of 5x1010 cycles have been achieved in several switches from different lots under 33 dbm RF power.
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Afshin Ziaei, Afshin Ziaei, Thierry Dean, Thierry Dean, Yves Mancuso, Yves Mancuso, } "Lifetime characterization of capacitive power RF MEMS switches", Proc. SPIE 6172, Smart Structures and Materials 2006: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, 61720K (31 March 2006); doi: 10.1117/12.654483; https://doi.org/10.1117/12.654483
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