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4 April 2006 FIB-based measurement of local residual stresses on microsystems
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Abstract
The paper comprises research results obtained for stress determination on micro and nanotechnology components. It meets the concern of controlling stresses introduced to sensors, MEMS and electronics devices during different micromachining processes. The method bases on deformation measurement options made available inside focused ion beam equipment. Removing locally material by ion beam milling existing stresses / residual stresses lead to deformation fields around the milled feature. Digital image correlation techniques are used to extract deformation values from micrographs captured before and after milling. In the paper, two main milling features have been analyzed - through hole and through slit milling. Analytical solutions for stress release fields of in-plane stresses have been derived and compared to respective experimental findings. Their good agreement allows to settle a method for determination of residual stress values, which is demonstrated for thin membranes manufactured by silicon micro technology. Some emphasis is made on the elimination of main error sources for stress determination, like rigid body object displacements and rotations due to drifts of experimental conditions under FIB imaging. In order to illustrate potential application areas of the method residual stress suppression by ion implantation is evaluated by the method and reported here.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dietmar Vogel, Neus Sabate D.D.S., Astrid Gollhardt, Juergen Keller, Juergen Auersperg, and Bernd Michel "FIB-based measurement of local residual stresses on microsystems", Proc. SPIE 6175, Testing, Reliability, and Application of Micro- and Nano-Material Systems IV, 617505 (4 April 2006); https://doi.org/10.1117/12.658298
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