18 April 2006 Intracavity nonlinear optics of semiconductor nanostructures and new mid/far-infrared laser schemes
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Proceedings Volume 6180, Photonics, Devices, and Systems III; 618004 (2006) https://doi.org/10.1117/12.675639
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
Recent theoretical and experimental results in nonlinear optics of semiconductor nanostructures and intracavity nonlinear mixing of laser modes are reviewed. A comparative analysis of the implemented and newly suggested schemes for the difference- and sum-frequency, second-harmonic, and parametric generation is presented. In particular, the problems of nonlinear photonic crystals, true- and quasi-phase-matching designs, and the use of the longitudinal, transverse, and 2D (metal or dielectric) gratings in the surface-emitting semiconductor devices are discussed. The most promising schemes of nonlinear-mixing lasers, both quantum cascade (intersubband) and diode-type (interband), are described. Finally, numerous applications of nonlinear-mixing lasers and open issues in physics and technology posed by the problem are given.
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Vladimir Ya. Aleshkin, Aleksandr A. Afonenko, Aleksey A. Belyanin, Aleksandr A. Dubinov, Vitaly V. Kocharovsky, Vladimir V. Kocharovsky, Marlan O. Scully, "Intracavity nonlinear optics of semiconductor nanostructures and new mid/far-infrared laser schemes", Proc. SPIE 6180, Photonics, Devices, and Systems III, 618004 (18 April 2006); doi: 10.1117/12.675639; https://doi.org/10.1117/12.675639
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