18 April 2006 Si:Er-based light emitting diodes grown with sublimation MBE technique for optoelectronic applications
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Proceedings Volume 6180, Photonics, Devices, and Systems III; 618008 (2006) https://doi.org/10.1117/12.675644
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
We examine here various types of Si:Er-based light emitting diodes (LEDs) grown with an original Sublimation MBE technique and radiating at 1.54 microns under p-n junction breakdown. It is concluded that p-n junction breakdown mechanism is the most effective way to control Er-related EL in reverse biased LEDs. Maximal Er-related EL intensity and excitation efficiency at room temperature are achieved in LEDs operating under mixed breakdown regime where tunnel and avalanche breakdown mechanisms present equally. The effective excitation cross section and the lifetime of excited Er3+, the internal quantum efficiency and the thickness of the "dark" region are measured for SMBE grown LEDs radiating under mixed p-n junction breakdown.
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Viacheslav B. Shmagin, Viacheslav B. Shmagin, Dmitry Yu. Remizov, Dmitry Yu. Remizov, Viktor P. Kuznetsov, Viktor P. Kuznetsov, Vladimir N. Shabanov, Vladimir N. Shabanov, Zakhary F. Krasilnik, Zakhary F. Krasilnik, } "Si:Er-based light emitting diodes grown with sublimation MBE technique for optoelectronic applications", Proc. SPIE 6180, Photonics, Devices, and Systems III, 618008 (18 April 2006); doi: 10.1117/12.675644; https://doi.org/10.1117/12.675644
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