18 April 2006 Improved picosecond laser ablation with second harmonic seeding
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Proceedings Volume 6180, Photonics, Devices, and Systems III; 61801S (2006) https://doi.org/10.1117/12.675831
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
We report on recent results of laser ablation in semiconductors obtained by simultaneous irradiation of the sample with a superposition of the fundamental beam of a picosecond-Neodymium-Vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small fraction of its second harmonic (SH) produced in a thin nonlinear crystal. In this fashion, the ablation yield could be increased by 70%. In addition, the ablation quality was improved in terms of surface smoothness. The underlying mechanism can be attributed to a 'seeding' of the target area with free carriers by the 532 nm radiation.
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S. Zoppel, J. Zehetner, G. A. Reider, "Improved picosecond laser ablation with second harmonic seeding", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61801S (18 April 2006); doi: 10.1117/12.675831; https://doi.org/10.1117/12.675831
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