18 April 2006 Single-mode lasing from ZnO-SiO2 thin film nanoresonators obtained by magnetron sputtering method
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Abstract
Investigations of the spontaneous and stimulated emission spectra by optical pumping of ZnO layers deposited on SiO2-Si and opal were carried out. The stimulated emission pumped under ultra violet 337 nm N2 laser excitation was observed at 397 nm at room temperature from ZnO-SiO2-Si type and ZnO-opal type thin film structures. The threshold pumped power for the electron-hole plasma recombination laser process is of the order of 35 MW/cm2 for ZnO-SiO2-Si and 300 KW/cm2 for ZnO-opal structures.
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Alexander Gruzintsev, Gennadi Emelchenko, Carlos Barthou, Paul Benalloul, Vladimir Volkov, "Single-mode lasing from ZnO-SiO2 thin film nanoresonators obtained by magnetron sputtering method", Proc. SPIE 6182, Photonic Crystal Materials and Devices III (i.e. V), 61822C (18 April 2006); doi: 10.1117/12.666650; https://doi.org/10.1117/12.666650
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