20 April 2006 Design optimization of SiGe/Si: modulation-doped multiple quantum well modulator for high-speed operation
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A structure based on the free-carrier-induced electrorefractive effect in Si/SiGe modulation-doped quantum wells, placed in the intrinsic region of a PIN diode has been proposed. Effective index variation produced by carrier depletion under a reverse bias leads to a phase modulation of a guided wave. The measured variation of the effective index is typically 2.10-4 for a 0V to 6V variation of the reverse bias voltage. This study is focused on the integration of modulation doped SiGe/Si quantum-well optical modulator in SOI submicron rib waveguides with optical losses lower than 0.4dB/cm. The influence of the geometrical parameters, of layer doping and of the metallic contacts has been determined through numerical simulations and optimized modulation structures are defined. The obtained factor of merit LχVχ is then of 1.26 V.cm which can be favorably compared with the best published results obtained with other optimized modulators.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sylvain Maine, Sylvain Maine, Delphine Marris-Morini, Delphine Marris-Morini, Laurent Vivien, Laurent Vivien, Daniel Pascal, Daniel Pascal, Éric Cassan, Éric Cassan, Suzanne Laval, Suzanne Laval, } "Design optimization of SiGe/Si: modulation-doped multiple quantum well modulator for high-speed operation", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61830D (20 April 2006); doi: 10.1117/12.661915; https://doi.org/10.1117/12.661915


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