20 April 2006 3-D integration of nanophotonics with CMOS electronics
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A novel approach to three-dimensionally (3-D) integrate nanophotonic and electronic devices in silicon is described. The method is based on the SIMOX (Separation by Implantation of OXygen) process, to realize three-dimensionally (3-D) integrated devices in a monolithic fashion. In this approach, photonic and electronic devices are realized on vertically stacked layers of silicon, separated from each other by a dielectric layer of silicon dioxide formed through the process of oxygen implantation. Opto-electronic integration is demonstrated by realizing photonic circuits in a subterranean silicon layer and Metal-Oxide-Semiconductor (MOS) transistors on a surface layer of silicon. Optical and electronic functionalities are thus separated into two different layers of silicon, paving the way towards dense three-dimensional opto-electronic integration. This has the significant advantage that photonic devices do not consume any of the expensive silicon real estate required for CMOS circuitry. The versatility of the technique of SIMOX 3-D sculpting in obtaining complex optical circuitry is also demonstrated by synthesizing a cascaded microdisk structure that may be utilized to tailor the passband characteristics of optical filters.
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Bahram Jalali, Bahram Jalali, Tejaswi Indukuri, Tejaswi Indukuri, Prakash Koonath, Prakash Koonath, Koichiro Kishima, Koichiro Kishima, } "3-D integration of nanophotonics with CMOS electronics", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 618314 (20 April 2006); doi: 10.1117/12.669074; https://doi.org/10.1117/12.669074

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