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20 April 2006 Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3μm wavelength
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Abstract
We report on the design and experimental results of monolithically integrated optoelectronic devices containing distributed feedback (DFB) laser, electroabsorption modulator (EAM), and semiconductor optical amplifier (SOA). Common InGaAlAs multiple quantum well (MQW) layers are used in all device sections. The incorporation of local lateral metal gratings in the DFB section enables device fabrication by single-step epitaxial growth. The emission wavelength is λ=1.3 micrometer. More than 2 mW single-mode fiber-coupled output power as well as 10 dB/2 V static extinction ratio have been achieved. Modulation experiments clearly show 10 Gbit/s capability.
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Philipp Gerlach, Martin Peschke, Thomas Wenger, Brem K. Saravanan, Christian Hanke, Steffen Lorch, and Rainer Michalzik "Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3μm wavelength", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831J (20 April 2006); doi: 10.1117/12.661878; https://doi.org/10.1117/12.661878
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