20 April 2006 Large area Si light emitting device for the mid-wave and long-wave infrared bands
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The design, fabrication technology and parameters are presented for monolithic linear 16-element IR emitter bar and the 8 x 8 stack of bars. Both types of devices are based on the Si p+in+-diodes with the 0.86 x 0.86 mm2 emitting surface integrated into a single chip and operated at well above room temperatures by the contact double injection of free charge carrier. To bypass Si electronic band structure limitation, we utilized free carrier absorption as a way to monitor material below-bandgap IR thermal emission. At a device temperature T=453 K, nearly 1.0 mW output power and 420 K apparent temperature of IR (3 to 12 μkm spectral band) radiation could be achieved with ~0.8% external power efficiency and 0.1 ms rise-fall time. This represents the longer wavelengths, higher operating temperatures and output power from Si spontaneous emitters ever reported.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko, S. S. Bolgov, and O. Yu. Malyutenko "Large area Si light emitting device for the mid-wave and long-wave infrared bands", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831M (20 April 2006); doi: 10.1117/12.662748; https://doi.org/10.1117/12.662748


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