High power gain switched laser diodes using a novel compact picosecond switch based on a GaAs bipolar junction transistor structure for pumping

Sergey Vainshtein; Juha Kostamovaara

doi:10.1117/12.661881

14 April 2006 High power gain switched laser diodes using a novel compact picosecond switch based on a GaAs bipolar junction transistor structure for pumping

Sergey Vainshtein, Juha Kostamovaara

Author Affiliations +

Proceedings Volume 6184, Semiconductor Lasers and Laser Dynamics II; 618403 (2006) https://doi.org/10.1117/12.661881
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

A number of up-to-date applications, including advanced optical radars with high single-shot resolution, precise 3 D imaging, laser tomography, time imaging spectroscopy, etc., require low-cost, compact, reliable sources enabling the generation of high-power (1-100 W) single optical pulses in the picosecond range. The well-known technique of using the gain-switching operation mode of laser diodes to generate single picosecond pulses in the mW range fails to generate high-power single picosecond pulses because of a lack of high-current switches operating in the picosecond range. We report here on the achieving of optical pulses of 45W / 70ps, or alternatively 5W / 40ps, with gain-switched commercial quantum well (QW) laser diodes having emitting areas of 250 × 200 μm and 75 × 2 μm, respectively. This was made possible by the use of a novel high-current avalanche switch based on a GaAs bipolar junction transistor (BJT) structure with a switching time (<200ps) comparable to the lasing delay. (The extremely fast transient in this switch is caused by the generation and spread of a comb of powerfully avalanching Gunn domains of ultra-high amplitude in the transistor structure.) A simulation code developed earlier but modified and carefully verified here allowed detailed comparison of the experimental and simulated laser responses and the transient spectrum.

Citation Download Citation

Sergey Vainshtein and Juha Kostamovaara "High power gain switched laser diodes using a novel compact picosecond switch based on a GaAs bipolar junction transistor structure for pumping", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 618403 (14 April 2006); https://doi.org/10.1117/12.661881

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