14 April 2006 Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers
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Proceedings Volume 6184, Semiconductor Lasers and Laser Dynamics II; 61840E (2006); doi: 10.1117/12.662048
Event: SPIE Photonics Europe, 2006, Strasbourg, France
Abstract
In this contribution, microscopic simulation of optical gain in GaN-based short-wavelength lasers is presented. The model is used to perform a design study of different active regions, and to discuss the impact of inhomogeneous broadening, carrier-induced screening of the piezo charges, and well thickness on material gain and laser threshold current. As a reference, the model parameters are calibrated with temperature dependent Hakki-Paoli measurements of spectral gain. Excellent agreement between measurement and simulation is achieved, which gives the design studies a quantitative character.
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Bernd Witzigmann, Valerio Laino, Mathieu Luisier, Friedhard Roemer, Georg Feicht, Ulrich T. Schwarz, "Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840E (14 April 2006); doi: 10.1117/12.662048; https://doi.org/10.1117/12.662048
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KEYWORDS
Quantum wells

Semiconductor lasers

Optical simulations

Temperature metrology

Gallium nitride

Indium gallium nitride

Laser damage threshold

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