14 April 2006 Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates
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In this work we present the reliability study of low dislocation density InGaN laser diodes grown on the top of GaN monocrystalline substrates obtained by high-pressure growth technique. The active region of our lasers consists of an InGaN/InGaN multiple quantum well (MQW) emitting blue light around 415nm, placed between GaN or InGaN guiding layers and GaN/AlGaN superlattices as n- and p-cladding. We discovered two basic mechanisms of degradation in our laser diodes. The first one is characterized by a gradual increase of threshold current and stable behavior of differential quantum efficiency. In case of this mechanism the results showing square root dependence of threshold current during aging suggest that the diffusion of point defects and an enhancement in nonradiative recombination are responsible for degradation processes in our laser diodes. The second mechanism leads to a decrease of differential quantum efficiency with threshold current remaining constant. We associate this degradation mode with a gradual deterioration of dielectric mirror coatings.
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L. Marona, L. Marona, P. Wisniewski, P. Wisniewski, P. Prystawko, P. Prystawko, S. Porowski, S. Porowski, T. Suski, T. Suski, M. Leszczynski, M. Leszczynski, I. Grzegory, I. Grzegory, R. Czernecki, R. Czernecki, P. Perlin, P. Perlin, T. Riemann, T. Riemann, J. Christen, J. Christen, } "Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840G (14 April 2006); doi: 10.1117/12.662327; https://doi.org/10.1117/12.662327

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