14 April 2006 Time-resolved scanning near-field microscopy of InGaN laser diode dynamics
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Abstract
We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 μm narrow and a 10 μm wide ridge waveguide laser diode.
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U. T. Schwarz, C. Lauterbach, M. O. Schillgalies, C. Rumbolz, M. Furitsch, A. Lell, V. Härle, "Time-resolved scanning near-field microscopy of InGaN laser diode dynamics", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840K (14 April 2006); doi: 10.1117/12.662019; https://doi.org/10.1117/12.662019
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