Translator Disclaimer
14 April 2006 High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature
Author Affiliations +
A high-growth-temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3-μm multilayer InAs/GaAs quantum-dot (QD) lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved laser performance. The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR) coated facets has been utilized to further reduce the threshold current and threshold current density (Jth) for 1.3-μm InAs/GaAs QD lasers. Very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a 3-layer device with a 1-mm long HR/HR cavity. For a 2-mm cavity the continuous-wave threshold current density is as low as 17 A/cm2 at room temperature for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets. The high-growth-temperature spacer layers have only a relatively small effect on the temperature stability of the threshold current above room temperature. To further increase the characteristic temperature (T0) of the QD lasers, 1.3-μm InAs/GaAs QD lasers incorporating p-type modulation doping have been grown and studied. A negative T0 and Jth of 48 A/cm-2 at room temperature have been obtained by combining the high-growth-temperature GaAs spacer layers with the p-type modulation doping of the QDs.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Y. Liu, T. J. Badcock, K. M. Groom, M. Hopkinson, M. Gutiérrez, D. T. Childs, C. Jin, R. A. Hogg, I. R. Sellers, D. J. Mowbray, M. S. Skolnick, R. Beanland, and D. J. Robbins "High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 618417 (14 April 2006);


Back to Top