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21 April 2006 Monolithically integrated transceiver chips for bidirectional optical interconnection
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Abstract
We report on the design, fabrication and test results of monolithically integrated transceiver chips consisting of GaAs metal-semiconductor-metal photodiodes and 850nm wavelength vertical-cavity surface-emitting lasers. These chips are well suited for low-cost and compact bidirectional optical interconnection at Gbit/s data rates in mobile systems and industrial or home networks employing large core size multimode fibers.
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Martin Stach, Manikandan Chandran, Fernando Rinaldi, Steffen Lorch, Ihab Kardosh, Hendrik Roscher, Philipp Gerlach, and Rainer Michalzik "Monolithically integrated transceiver chips for bidirectional optical interconnection", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850Q (21 April 2006); https://doi.org/10.1117/12.662819
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