21 April 2006 Monolithically integrated transceiver chips for bidirectional optical interconnection
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Abstract
We report on the design, fabrication and test results of monolithically integrated transceiver chips consisting of GaAs metal-semiconductor-metal photodiodes and 850nm wavelength vertical-cavity surface-emitting lasers. These chips are well suited for low-cost and compact bidirectional optical interconnection at Gbit/s data rates in mobile systems and industrial or home networks employing large core size multimode fibers.
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Martin Stach, Martin Stach, Manikandan Chandran, Manikandan Chandran, Fernando Rinaldi, Fernando Rinaldi, Steffen Lorch, Steffen Lorch, Ihab Kardosh, Ihab Kardosh, Hendrik Roscher, Hendrik Roscher, Philipp Gerlach, Philipp Gerlach, Rainer Michalzik, Rainer Michalzik, } "Monolithically integrated transceiver chips for bidirectional optical interconnection", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850Q (21 April 2006); doi: 10.1117/12.662819; https://doi.org/10.1117/12.662819
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