21 April 2006 Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs
Author Affiliations +
In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Pougeoise, E. Pougeoise, Ph. Gilet, Ph. Gilet, Ph. Grosse, Ph. Grosse, S. Poncet, S. Poncet, A. Chelnokov, A. Chelnokov, J.-M. Gérard, J.-M. Gérard, G. Bourgeois, G. Bourgeois, R. Stevens, R. Stevens, R. Hamelin, R. Hamelin, M. Hammar, M. Hammar, J. Berggren, J. Berggren, P. Sundgren, P. Sundgren, Sébastien Vilain, Sébastien Vilain, J.-S. Bouillard, J.-S. Bouillard, G. Lerondel, G. Lerondel, R. Bachelot, R. Bachelot, P. Royer, P. Royer, } "Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850U (21 April 2006); doi: 10.1117/12.662118; https://doi.org/10.1117/12.662118

Back to Top