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21 April 2006 760 nm high-performance VCSEL growth and characterization
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Abstract
High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fernando Rinaldi, Johannes M. Ostermann, Andrea Kroner, Michael C. Riedl, and Rainer Michalzik "760 nm high-performance VCSEL growth and characterization", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850X (21 April 2006); https://doi.org/10.1117/12.662839
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