27 April 2006 Interferometric and confocal techniques for testing of silicon wafers
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Proceedings Volume 6188, Optical Micro- and Nanometrology in Microsystems Technology; 61880C (2006); doi: 10.1117/12.662234
Event: SPIE Photonics Europe, 2006, Strasbourg, France
Abstract
The paper provides new insights into Silicon wafer measurements in context of technological problems of developing a sophisticated measurement technique, which harnesses helium atom beam as a probe. Nano-resolution imaging techniques such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) are well-know in surface science. A scanning helium atom microscope, where a focused beam of low energy, neutral helium atoms is used as an imaging probe is a new concept creating non-destructive and non-invasive surface investigation tool in science and industry. This paper is focused on measurements of flatness and thickness of the wafer, which is used as a deflecting mirror of the helium beam. Two -optics based- measurement techniques are presented: scanning confocal system and the Fizeau interferometer. The latter is applied as a quick reference device placed close to the production line whereas the former offers high accuracy flatness and thickness maps of the wafers.
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J. Galas, D. Litwin, S. Sitarek, B. Surma, B. Piatkowski, A. Miros, "Interferometric and confocal techniques for testing of silicon wafers", Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61880C (27 April 2006); doi: 10.1117/12.662234; https://doi.org/10.1117/12.662234
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KEYWORDS
Semiconducting wafers

Confocal microscopy

Chemical species

Helium

Mirrors

Interferometry

Interferometers

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