28 April 2006 Interferometric measurement of thickness of silicon nitride layer in bi-morph silicon MEMS
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Abstract
In this paper is reported a method for measuring the thickness of a silicone nitride layers employed for fabricating silicon MEMS bi-morph structures. The method allows the precise evaluation of layer thickness by adopting Digital Holographic Microscope. The measurement is based on the fact that the silicon nitride layer is transparent to the visible light. The optical phase difference (OPD) between the light beam traveling through the layer and portion of the beam in air is measured exploiting an interferometric technique. The approach is very simple and can be utilized even for inspection of non-planar or stressed structures. Experimental values have been compared with ellipsometric measurements.
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P. Ferraro, M. Paturzo, S. De Nicola, A. Finizio, G. Pierattini, G. Coppola, M. Iodice, V. Striano, M. Gagliardi, "Interferometric measurement of thickness of silicon nitride layer in bi-morph silicon MEMS", Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61880R (28 April 2006); doi: 10.1117/12.664096; https://doi.org/10.1117/12.664096
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