28 April 2006 Thermal characterization of power transistors by close-infrared thermography method
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In this work, the thermal characterization of a power MOSFET (Metal-Oxide-Silicon-Field-Effect-Transistor) using near infrared thermography method is presented. This characterization is based on the measurement of thermal radiation emitted by power transistor in the spectral domain ranging from 800 nm to 1000 nm. The thermal measurement is obtained in steady and dynamic mode and the absolute temperature distribution is measured at the micron scale. In dynamic mode, the transistor is heated (by Joule effect) at a frequency compatible with the camera acquisition speed. Results obtained in both modes highlight the excellent spatial resolution (optical resolution) of the experimental measurement apparatus and its great sensitivity for detection of weak thermal emission variations.
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S. Dhokkar, S. Dhokkar, B. Serio, B. Serio, J. J. Hunsinger, J. J. Hunsinger, P. Lagonotte, P. Lagonotte, } "Thermal characterization of power transistors by close-infrared thermography method", Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61881E (28 April 2006); doi: 10.1117/12.663500; https://doi.org/10.1117/12.663500

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