22 April 2006 Dynamic response of AlGaN based sensors under excimer laser irradiation
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Abstract
The photo-response of AlGaN based UV detectors to a 193 nm excimer laser radiation is presented. Two devices have been tested and compared, a metal-semiconductor-metal (MSM) planar structure and a Schottky diode. These sensors have already shown good performances in the 240-280 nm region under CW illumination and have been used for the realization of 2D and linear arrays. Here the capability of these devices to detect the emission of a nanosecond pulsed excimer laser is proven and the decay time and dependency on the beam's density of energy evaluated. The measured transient response of the MSM device closely follows the nanosecond laser pulses, with a decay time shorter than 3 ns. Conversely, the Schottky diodes showed a slower rise and decay kinetics principally limited by the coupling with the junction capacitance. The decay curve of such a device has been analyzed on the basis of two decay mechanisms: the second exponential decay has been found to be in the order of 40 ns. This slow kinetic has been attributed to the presence of trap states localized at a distance from the conduction or valence band larger then the thermal energy of the carriers. Both the realized devices do follow the Rose's law with a linear response at the lower beam fluxes (density of energy 4×10-5 - 0.2 mJ/mm2) and a transition to a sub-linear regime for higher fluxes.
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G. Mazzeo, J-L. Reverchon, G. Conte, A. Dussaigne, J-Y. Duboz, "Dynamic response of AlGaN based sensors under excimer laser irradiation", Proc. SPIE 6189, Optical Sensing II, 61890E (22 April 2006); doi: 10.1117/12.664430; https://doi.org/10.1117/12.664430
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