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22 April 2006 MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs
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Abstract
The measurement signal (S) to noise (N) ratio (S/N) of novel 128×128 FPA in temperature range 77 -130K was carried out. FPA for spectral range 8-12 μm was fabricated by B+ implantation process into graded MCT P-p heterojunction with potential barrier. MCT P-p heterojunction with specific MCT composition throughout the thickness was grown by MBE on GaAs substrate by ellipsometric control in situ. The potential barrier was determined by the difference of MCT composition at absorber and p-n junction location layers and equal to ΔXCdTe = 0,025. It was shown that based on P-p heterojunction FPA operated temperature and wavelength increases over routine one without P-p heterojunction. Keywords: graded gap layers, heterojunction, MCT, photodiodes, FPA.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Vasiliev, V. G. Remesnik D.D.S., S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, Yu. G. Sidorov, A. O. Suslyakov, and A. L. Aseev "MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs", Proc. SPIE 6189, Optical Sensing II, 61892A (22 April 2006); https://doi.org/10.1117/12.663506
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