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22 April 2006 Infrared sensor based on nanostructure of vanadium dioxide
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Abstract
A new nanopolycrystal of vanadium dioxide has been prepared. The average grain size is 8-10nm and the phase transition temperature drops down to 35°C. The temperature coefficiency of resistance (TCR) is 6-7%/°C in semiconductor zone. A linear senor has been fabricated based on the nanostructure of vanadium dioxide thin films and the test indicates that the characteristics has been improved greatly compared with sensors based on using conventional vanadium dioxide thin films.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuqing Zhu, Yi Li, Ying Huang, and Xinjian Yi "Infrared sensor based on nanostructure of vanadium dioxide", Proc. SPIE 6189, Optical Sensing II, 61892B (22 April 2006); https://doi.org/10.1117/12.663724
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