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20 April 2006 Light-emitting organic field-effect transistors using an organic heterostructure inside the transistor channel
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Abstract
We have realized a light-emitting organic field-effect transistor (LEOFET). Excitons are generated at the interface of an n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The recombination region is several microns from the metal electrodes. Therefore, the exciton quenching probability in this device is reduced. Numerical simulations show that the recombination region can move within the transistor channel by changing the biasing conditions.
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Stijn De Vusser, Soeren Steudel, Sarah Schols, Stijn Verlaak, Jan Genoe, Wibren D. Oosterbaan, Laurence J. Lutsen, Dirk J. M. Vanderzande, and Paul L. Heremans "Light-emitting organic field-effect transistors using an organic heterostructure inside the transistor channel", Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61920J (20 April 2006); https://doi.org/10.1117/12.664399
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