20 April 2006 Photo-induced phenomena in organic field-effect phototransistors based on conjugated polymer/fullerene blends and organic dielectric
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Abstract
Photo-induced phenomena were investigated in photoresposive organic field-effect transistors (photOFETs) based on conjugated polymer/fullerene solid-state mixtures as active semiconductor layer and divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) as gate dielectrics. The devices were characterized both in under dark showing n-type transistor behaviour with linear and saturated mobility of 1.7 x 10-3 cm2/Vs and 2.7 x 10-2 cm2/Vs respectively, and under white light illumination condition, where large shifts in the threshold voltage in the transfer characteristics were obtained. A typical phototransistor behaviour in a wide range of illumination intensities are observed in these devices.
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N. Marjanović, N. Marjanović, Th. B. Singh, Th. B. Singh, G. Dennler, G. Dennler, S. Günes, S. Günes, R. Koeppe, R. Koeppe, H. Neugebauer, H. Neugebauer, N. S. Sariciftci, N. S. Sariciftci, S. Bauer, S. Bauer, } "Photo-induced phenomena in organic field-effect phototransistors based on conjugated polymer/fullerene blends and organic dielectric", Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61921D (20 April 2006); doi: 10.1117/12.663042; https://doi.org/10.1117/12.663042
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