19 April 2006 InN as THz emitter excited at 1060 nm and 800 nm
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Abstract
InN, a novel semiconductor material, is used as THz surface emitter. The material is irradiated with fs-laser pulses at 1060 nm and 800 nm and the emitted ultrashort THz pulses are measured by phase sensitive detection. Pulsforms, amplitudes and spectra are compared to the THz emission of p-doped InAs, the standard material for THz surface emission.
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Boris Pradarutti, Boris Pradarutti, Gabor Matthäus, Gabor Matthäus, Claudia Brückner, Claudia Brückner, Stefan Riehemann, Stefan Riehemann, Gunther Notni, Gunther Notni, Stefan Nolte, Stefan Nolte, Volker Cimalla, Volker Cimalla, Vadim Lebedev, Vadim Lebedev, Oliver Ambacher, Oliver Ambacher, Andreas Tünnermann, Andreas Tünnermann, } "InN as THz emitter excited at 1060 nm and 800 nm", Proc. SPIE 6194, Millimeter-Wave and Terahertz Photonics, 61940I (19 April 2006); doi: 10.1117/12.662301; https://doi.org/10.1117/12.662301
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