THz semiconductor hot electron bolometer (SHEB)

V. N. Dobrovolsky; F. F. Sizov

doi:10.1117/12.662265

19 April 2006 THz semiconductor hot electron bolometer (SHEB)

V. N. Dobrovolsky, F. F. Sizov

Proceedings Volume 6194, Millimeter-Wave and Terahertz Photonics; 61940O (2006) https://doi.org/10.1117/12.662265
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

Moderately cooled, fast and diffraction-limited THz bolometer is proposed and its theoretical model is developed. Unlike thermal bolometers, the radiation rapidly heats only electrons in narrow gap bipolar semiconductor without the semiconductor lattice inertial heating. In conditions determined this heating changes generation and recombination processes, that leads to the carrier concentration decrease and semiconductor resistance rise. This rise creates the device output signal. According to this model the SHEB on base of narrow gap mercury cadmium telluride (MCT) semiconductor at temperature of T = 78 K can have detectivity D* ~ (0.3-2)10⁷ cmHz^1/2/W in the range of (0.01-1.5) THz.

Citation Download Citation

V. N. Dobrovolsky and F. F. Sizov "THz semiconductor hot electron bolometer (SHEB)", Proc. SPIE 6194, Millimeter-Wave and Terahertz Photonics, 61940O (19 April 2006); https://doi.org/10.1117/12.662265

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