19 April 2006 THz semiconductor hot electron bolometer (SHEB)
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Abstract
Moderately cooled, fast and diffraction-limited THz bolometer is proposed and its theoretical model is developed. Unlike thermal bolometers, the radiation rapidly heats only electrons in narrow gap bipolar semiconductor without the semiconductor lattice inertial heating. In conditions determined this heating changes generation and recombination processes, that leads to the carrier concentration decrease and semiconductor resistance rise. This rise creates the device output signal. According to this model the SHEB on base of narrow gap mercury cadmium telluride (MCT) semiconductor at temperature of T = 78 K can have detectivity D* ~ (0.3-2)107 cmHz1/2/W in the range of (0.01-1.5) THz.
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V. N. Dobrovolsky, V. N. Dobrovolsky, F. F. Sizov, F. F. Sizov, "THz semiconductor hot electron bolometer (SHEB)", Proc. SPIE 6194, Millimeter-Wave and Terahertz Photonics, 61940O (19 April 2006); doi: 10.1117/12.662265; https://doi.org/10.1117/12.662265
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