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20 April 2006 Free-standing Si/SiO2 superlattices: fabrication procedure and optical, structural, and light-emitting properties
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Abstract
The Si/SiO2 superlattices were prepared by a molecular beam deposition method, high temperature furnace annealing (1100 °C), and back-side Si wafer etching in tetramethyl ammonium solution. Transmission electron microscopy and Raman spectroscopy show that the layered structure is not preserved during high temperature treatment. The etching of the substrate increases photoluminescence of the Si/SiO2 material. Optical waveguiding was realized for the free-standing sample demonstrating its reasonable optical quality and providing the optical parameters.
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S. Novikov, J. Sinkkonen, L. Khriachtchev, M. Räsänen, and A. Sitnikova "Free-standing Si/SiO2 superlattices: fabrication procedure and optical, structural, and light-emitting properties", Proc. SPIE 6195, Nanophotonics, 619512 (20 April 2006); https://doi.org/10.1117/12.661849
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