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20 April 2006 Self-assembled Ni nanodot on SiO2 film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate
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Abstract
By rapid thermal annealing the Ni film evaporated on thin SiO2 layer covered Si substrate, we have successfully demonstrated the self-aggregation of two-dimensional randomized Ni nano-dots on Si wafer. The thin oxide layer prevents the formation of NiSi2 compounds and facilitates the self-assembly of Ni nanodots from retaining the thermal power on SiO2 layer. This greatly shrinks the annealing time required for metallic nanodot formation from >10 min to <30 sec. With the advantage of the self-assemble Ni/SiO2 nano-dots based nano-mask, a large-area Si nano-pillar array with rod size of <50 nm can be formatted on Si substrate through the induced coupled plasma reactive ion etching (ICP-RIE) procedure. After removing Ni dots and the SiO2 film on the Si substrate, both the visible and near infrared photoluminescence from the Si nano-pillar sample were observed and analyzed.
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Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, and Gong-Ru Lin "Self-assembled Ni nanodot on SiO2 film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate", Proc. SPIE 6195, Nanophotonics, 61951W (20 April 2006); https://doi.org/10.1117/12.663339
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