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12 May 2006 Silicon-nitride for solar cells
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Abstract
The application of contactless transient photoconductivity measurements in the microwave frequency range for the optoelectronic characterization of Silicon-nitride covered Silicon samples for solar cells is investigated. It is shown that these measurements are a very sensitive tool for the study of the anti-reflection properties of Silicon-nitride films. The investigation of Silicon heterojunction solar cells shows that the illumination of the Silicon-nitride covered rear face of these heterojunctions may be a method to improve the efficiency of these solar cells.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kunst, O. Abdallah, and F. Wuensch "Silicon-nitride for solar cells", Proc. SPIE 6197, Photonics for Solar Energy Systems, 619703 (12 May 2006); https://doi.org/10.1117/12.661521
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