12 May 2006 Nonlinear collection efficiency of Si solar cells containing nanoscale Si-layered systems
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Abstract
A nonlinearly of the photovoltaic conversion which depends on the light excitation has been observed on multi-interface Si devices provided with a nanoscale layered system. The effect has been visualized on the carrier collection efficiency. An analysis and simulation of the spatial collection components has been done. In the experimental part, two approaches are reported: the collection dependency on the equipment used and on the light excitation. First, the same test cell has been measured using two types of equipment in three different laboratories, respectively: 1) filters with light focalization and 2) monochromator. Next, the collection has been measured with different intensities of probing flux without any optical bias. The difference of the excitations used in the filter apparatus with a focused spot (having after focusing the near-solar intensity) can be roughly estimated as five orders of magnitude. We conclude that the nonlinearity of the photovoltaic conversion depends on the density of free carriers confined inside the surface zone due to a carrier collection limit. This limit appears with a nanoscale Si-layered system at the upper crystalline/amorphous interface. The same system introduces new carrier generation centers within the crystalline Si. These centers are at the origin of a low energy carrier multiplication which strength the nonlinearity. As shown in the paper the nanoscale Si transformations lead, for example, to a considerable infrared collection improvement. This suggests that Si solar cells with very high efficiency should be realizable using this way.
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Zbigniew T. Kuznicki, Patrick Meyrueis, Gérard Sarrabayrouse, "Nonlinear collection efficiency of Si solar cells containing nanoscale Si-layered systems", Proc. SPIE 6197, Photonics for Solar Energy Systems, 61970A (12 May 2006); doi: 10.1117/12.663066; https://doi.org/10.1117/12.663066
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