The Spatial Variation Of Carrier Lifetime In Silicon Measured With An Optical Beam

D. L. Lile; N. M. Davis

doi:10.1117/12.954440

20 January 1976 The Spatial Variation Of Carrier Lifetime In Silicon Measured With An Optical Beam

D. L. Lile, N. M. Davis

Proceedings Volume 0062, Modern Utilization of Infrared Technology I; (1976) https://doi.org/10.1117/12.954440
Event: 19th Annual Technical Symposium, 1975, San Diego, United States

Abstract

An optical method for measuring the carrier recombination time in semiconductors is described. In particular, this method allows for the measurement of lifetime with high spatial resolution. Results are presented which demonstrate the capabilities of the technique and illustrate its application to the detection and characterization of defects.

Citation Download Citation

D. L. Lile and N. M. Davis "The Spatial Variation Of Carrier Lifetime In Silicon Measured With An Optical Beam", Proc. SPIE 0062, Modern Utilization of Infrared Technology I, (20 January 1976); https://doi.org/10.1117/12.954440

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available