17 May 2006 1 mm APDs in InGaAs with InAlAs and InP multiplication layers: performance characteristics
Author Affiliations +
Abstract
Large-area APDs operating in the wavelength region of 1- 1.5 micron are useful for many low light level applications. Present commercially available InGaAs based APDs are small, (<500 micron diameter size) and thus limit the field of view. We report here on low dark current density, large-area (1 mm diameter) InGaAs APDs. InGaAs APD device structures with InP and InAlAs multiplication layers were grown by metaloragnic vapor deposition method. The combination of good quality material and a proprietary passivation process yielded 1 mm APD devices with low dark current density and high gain. Devices exhibited gain as high as 30 and dark current density as low as 0.5 microamperes per square centimeter.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul McDonald, Joseph Boisvert, Takahiro Isshiki, Ping Yuan, Rengarajan Sudharsanan, "1 mm APDs in InGaAs with InAlAs and InP multiplication layers: performance characteristics", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 620606 (17 May 2006); doi: 10.1117/12.666052; https://doi.org/10.1117/12.666052
PROCEEDINGS
7 PAGES


SHARE
Back to Top