17 May 2006 MOVPE growth of QWIP detectors using tBAs as an alternative arsenic precursor
Author Affiliations +
The use of arsine in metal-organic vapor phase epitaxy (MOVPE) growth is well established in the compound semiconductor industry but associated with large potential risks due to its high toxicity. Worldwide efforts are therefore being made to replace it with less hazardous source materials. Acreo, a commercial supplier of quantum well infrared photodetector (QWIP) focal plane arrays (FPA), is working towards an MOVPE process where tertiarybutylarsine (tBAs) instead of arsine is used in the growth of AlGaAs/GaAs n-type QWIP epiwafers. In this paper we investigate the performance of QWIP FPA produced from conventional arsine and alternative tBAs arsenic precursors. We also discuss the two growth processes regarding uniformity, crystalline purity and production cost. The performance of our QWIP structures grown using tBAs and arsine is comparable in terms of response and response-to-the dark current ratio.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl Asplund, Carl Asplund, Hedda Malm, Hedda Malm, Henk Martijn, Henk Martijn, } "MOVPE growth of QWIP detectors using tBAs as an alternative arsenic precursor", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060F (17 May 2006); doi: 10.1117/12.668358; https://doi.org/10.1117/12.668358


QWIPs at IRnova, a status update
Proceedings of SPIE (May 19 2016)
QWIPs beyond FPAs: high-speed room-temperature detectors
Proceedings of SPIE (October 09 2001)
QWIP technology: advances and prospects
Proceedings of SPIE (June 11 2002)
Recent advances of QWIP development in Sweden
Proceedings of SPIE (May 13 2007)

Back to Top