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17 May 2006 Room temperature operation of InAs/GaSb SLS infrared photovoltaic detectors with cut-off wavelength ~5 μm
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Abstract
Optimization of various growth parameters for Type-II GaSb (10MLs)/InAs(10MLs) nanoscale superlattices (SL) and GaSb layers, grown by solid molecular beam epitaxy, has been undertaken. We present optical and structural characterization for these heterostructures, using high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and atomic force microscopy (AFM). Optimized parameters were then used for growth of InAs/GaSb SLs photovoltaic detectors (λcut-off ~5 μm) operating at room temperature. By controlling the nature of interfaces, the in-plane mismatch between GaSb-buffer layer and SLs can be reduced enabling the growth of active regions up to 3μm. Normal incidence single pixel photodiodes were fabricated using standard lithography with apertures ranging from 25-300 μm in diameter. The spectral response from the SLs detector was observed at room temperature. This suggests the potential of the SLs technology for realizing high operating temperature (HOT) sensors. Responsivity measurements were also undertaken using a calibrated black body source, 400Hz optical chopper, SR 770 FFT Network signal analyzer and Keithley 428 preamplifier. We obtained current responsivity equal 2.16 A/W at V = -0.3V(300K). The Johnson noise limited D* at 300K was estimated to be 4.6x109 cm·Hz1/2/W at V = -0.3V
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E. Plis, S. Annamalai, K. T. Posani, S. J. Lee, and S. Krishna "Room temperature operation of InAs/GaSb SLS infrared photovoltaic detectors with cut-off wavelength ~5 μm", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060O (17 May 2006); https://doi.org/10.1117/12.669172
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