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17 May 2006 Progress in MBE grown type-II superlattice photodiodes
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Abstract
We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8x1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of approximately 12μm. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range without antireflection coatings.
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Cory J. Hill, Jian V. Li, Jason M. Mumolo, and Sarath D. Gunapala "Progress in MBE grown type-II superlattice photodiodes", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060P (17 May 2006); https://doi.org/10.1117/12.672827
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