17 May 2006 Material growth, device design, and applications for uncooled LWIR HgCdTe detectors
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Abstract
The present generation of uncooled infrared photon detectors relies on complex heterostructures grown by low temperature epitaxial techniques. We report recent results on MOCVD grown Hg1-xCdxTe photodetectors and their applications. Special modifications to the interdiffused multilayer process (IMP) has been applied for the in-situ control of stoichiometry, improved morphology and minimized consumption of precursors. As a result we are able to grow fully-doped multiple layer heterostructures without any post-growth thermal anneal. The heterostructures have been used for fabrication of IR photodetectors optimized for any wavelength within the 1 to 15 μm range and operating at temperatures 200-300 K. Variable bandgap absorbers have been used for detectors with tuned spectral response and multicolor devices. The uncooled photodetectors have been applied in sub-ppb gas analyzers, laser warning devices, free space optical communications, Fourier Transform IR Spectroscopy, and many other IR systems.
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A. Piotrowski, J. Piotrowski, "Material growth, device design, and applications for uncooled LWIR HgCdTe detectors", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060T (17 May 2006); doi: 10.1117/12.671727; https://doi.org/10.1117/12.671727
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