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17 May 2006 Low power MWIR sensor with pixel A/D achieves 32 bit quantization level at 30 fps
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A digital readout for a 128X128 MWIR imaging spectrometer was developed and demonstrated in a camera system. InSb detectors were hybridized to the readout and mounted in a ceramic pin grid array package. A second order MOSAD, Multiplexed OverSample A/D, is placed at each pixel on a 40 um pitch. Double metal CMOS with 0.5 um geometry was used in the readout design. The sensor is designed to operate at up to 300 ksps. At this rate, depending on decimation, achievable dynamics ranges are, 14 bits at 4 kfps, 20 bits at 1 kps and 32 bits at 30 fps. Effective well capacity reaches 10E10 electrons at 30 fps decimation. On focal plane power consumption is under 90 milliwatts. A single 3.3 volt power supply and clock source drive the sensor. All timing and controls are derived on the sensor. The sensor hybrid was demonstrated in a pour fill dewar with f 2.3 optics. A next generation design can be built on a 10 um pixel pitch with 0.13 um CMOS to support other detector materials with the same or better performance This technology was developed under a SBIR program sponsored by US Air Force, Arnold Air Force Base.
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William Mandl "Low power MWIR sensor with pixel A/D achieves 32 bit quantization level at 30 fps", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 620616 (17 May 2006);

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