First demonstration of 640 x 480 uncooled amorphous silicon IRFPA with 25 µm pixel pitch

J. L. Tissot; B. Fièque; C. Trouilleau; P. Robert; A. Crastes; C. Minassian; O. Legras

doi:10.1117/12.667580

17 May 2006 First demonstration of 640 x 480 uncooled amorphous silicon IRFPA with 25 μm pixel pitch

J. L. Tissot, B. Fièque, C. Trouilleau, P. Robert, A. Crastes, C. Minassian, O. Legras

Proceedings Volume 6206, Infrared Technology and Applications XXXII; 620618 (2006) https://doi.org/10.1117/12.667580
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

This paper reviews characteristics and performance of the first 640 x 480 made from amorphous silicon microbolometers with a pixel-pitch of 25 μm. The full TV format IRFPA product is then described in terms of ROIC architecture, packaging, operability and electro-optical performances. The pixel architecture profits from the low thermal time constant which characterizes the amorphous silicon technology, to design a high performance 640 x 480 array. A new read out integrated circuit structure has been specially developed for this array. High level functions like gain, windowing and image flip could be operated through a serial link to minimize the number of electrical interconnections. At a 60Hz frame rate, focal planes with NETD less than 50mK (f/1) are now achieved with low spatial fixed pattern noise after sensor gain and offset compensation. Thanks to a new pixel design and by pushing the design rules even further, a high fill factor has been kept, without the use of complex, as well as expensive, two-level structure. This new detector has been qualified for production since September 2005.

Citation Download Citation

J. L. Tissot, B. Fièque, C. Trouilleau, P. Robert, A. Crastes, C. Minassian, and O. Legras "First demonstration of 640 x 480 uncooled amorphous silicon IRFPA with 25 μm pixel pitch", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 620618 (17 May 2006); https://doi.org/10.1117/12.667580

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