Silicon MOEMS-based IR sensors for the high-volume security market

Kevin C. Liddiard

doi:10.1117/12.665209

17 May 2006 Silicon MOEMS-based IR sensors for the high-volume security market

Kevin C. Liddiard

Proceedings Volume 6206, Infrared Technology and Applications XXXII; 62061M (2006) https://doi.org/10.1117/12.665209
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

In a previous paper presented to this SPIE forum a new technology was described which specifically addresses the high volume IR security sensor market. In the present paper, results are presented of recent research on silicon MOEMS-based resistance microbolometer technology directed towards high volume sensor manufacture. The dissertation includes the results of measurements made with an experimental sensor aimed at confirming performance predictions, including two mosaic-pixel FPA formats designed for multi-role applications. The conclusions support development of a silicon foundry compatible FPA technology using alloys of silicon as the temperature sensitive component, simple FPA packaging, and sensors units employing plastic optics and body components.

Citation Download Citation

Kevin C. Liddiard "Silicon MOEMS-based IR sensors for the high-volume security market", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62061M (17 May 2006); https://doi.org/10.1117/12.665209

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